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d a t a sh eet preliminary speci?cation file under integrated circuits, ic02 1998 mar 09 integrated circuits tda5744; tda5745 low power mixers/oscillators for hyperband tuners
1998 mar 09 2 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 features mixers/oscillators for hyperband tuners balanced mixer with a common emitter input for vhf (single input) balanced mixer with a common base input for uhf (double input) 4-pin common emitter oscillator for vhf 4-pin common emitter oscillator for uhf electronic band switch if amplifier with a low output impedance to drive the saw filter directly ( ? 2k w load) low power, low radiation and small size pin compatible single-chip synthesizer mixer/oscillator for full scale tuners (fst) are available: tda6404, tda6405 and tda6405a. applications hyperband tuners for europe using a 2-band mixer/oscillator in a switched concept. general description the tda5744 and tda5745 are 2-band mixers/oscillators intended for vhf/uhf and hyperband tuners (see fig.1). the integrated circuits (ics) include two double balanced mixers and two oscillators, for the vhf and uhf band, and an if amplifier. with proper oscillator application and by using a switchable inductor to split the vhf band into two sub-bands (the full vhf/uhf and hyperband) the tv bands can be covered. two pins are available between the mixer output and the if amplifier input to enable if filtering for improved signal handling. band selection is made by band switch pin bs. quick reference data ordering information symbol parameter conditions min. typ. max. unit v cc supply voltage operating 4.5 5 5.5 v i cc supply current - 58 - ma t stg ic storage temperature - 40 - +150 c t amb operating ambient temperature - 20 - +85 c f i(rf) rf input frequency vhf band 45.25 - 399.25 mhz uhf band 407.25 - 855.25 mhz g v voltage gain vhf band - 27 - db uhf band - 38 - db f noise ?gure vhf band - 8 - db uhf band - 8.5 - db v o output voltage causing 1% cross modulation in channel vhf band - 119 - db m v uhf band - 118 - db m v type number package name description version TDA5744TS; tda5745ts ssop24 plastic shrink small outline package; 24 leads; body width 5.3 mm sot340-1
1998 mar 09 3 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 block diagram fig.1 block diagram. the pin numbers in parenthesis represent the tda5745. handbook, full pagewidth mgm466 if amplifier dc stabilizer (11) 14 (12) 13 vhf oscillator vhf mixer uhf mixer vhf stage (3) 22 (4) 21 (1) 24 3 (22) uhf stage 2 (23) 1 (24) 12 (13) 11 (14) 10 (15) 8 (17) 7 (18 ) 6 (19) 5 (20) electronic band switch 9 (16) (2) 23 uhf oscillator (7) 18 (8) 17 (5) 20 (6) 19 (10) 15 (9) 16 4 (21) tda5744 (tda5745) uhfin1 uhfin2 vhfin rfgnd iffil1 iffil2 bs n.c. n.c. n.c. n.c. n.c. vhfoscib2 uhfoscoc1 uhfoscib1 gnd ifout2 ifout1 v cc uhfoscoc2 uhfoscib2 vhfoscib1 vhfoscoc1 vhfoscoc2
1998 mar 09 4 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 pinning symbol pin description tda5744 tda5745 uhfin1 1 24 uhf input 1 uhfin2 2 23 uhf input 2 vhfin 3 22 vhf input rfgnd 4 21 rf ground iffil1 5 20 if ?lter output 1 iffil2 6 19 if ?lter output 2 n.c. 7 18 not connected n.c. 8 17 not connected bs 9 16 electronic band switch n.c. 10 15 not connected n.c. 11 14 not connected n.c. 12 13 not connected v cc 13 12 supply voltage ifout1 14 11 if ampli?er output 1 ifout2 15 10 if ampli?er output 2 gnd 16 9 ground uhfoscib1 17 8 uhf oscillator base input 1 uhfoscoc1 18 7 uhf oscillator collector output 1 uhfoscoc2 19 6 uhf oscillator collector output 2 uhfoscib2 20 5 uhf oscillator base input 2 vhfoscib1 21 4 vhf oscillator base input 1 vhfoscoc1 22 3 vhf oscillator collector output 1 vhfoscoc2 23 2 vhf oscillator collector output 2 vhfoscib2 24 1 vhf oscillator base input 2
1998 mar 09 5 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 fig.2 pin configuration for TDA5744TS. handbook, halfpage uhfin1 uhfin2 vhfin rfgnd iffil1 iffil2 n.c. n.c. bs n.c. n.c. n.c. vhfoscib2 uhfoscoc1 uhfoscib1 gnd ifout2 ifout1 v cc 1 2 3 4 5 6 7 8 9 10 11 24 23 22 21 20 19 18 17 16 15 14 13 12 TDA5744TS mgm464 uhfoscoc2 uhfoscib2 vhfoscib1 vhfoscoc1 vhfoscoc2 fig.3 pin configuration for tda5745ts. handbook, halfpage vhfoscib2 vhfoscoc2 vhfoscoc1 vhfoscib1 uhfoscib2 uhfoscoc2 uhfoscoc1 uhfoscib1 gnd ifout2 ifout1 v cc uhfin1 n.c. n.c. bs n.c. n.c. n.c. 1 2 3 4 5 6 7 8 9 10 11 24 23 22 21 20 19 18 17 16 15 14 13 12 tda5745ts mgm465 iffil2 iffil1 rfgnd vhfin uhfin2
1998 mar 09 6 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics characteristics v cc =5v; t amb =25 c; unless otherwise speci?ed; measured in fig.11. symbol parameter min. max. unit i o(n) output current of each pin to ground: for tda5744; pins 1 to 6, 9 and 13 to 24 -- 10 ma for tda5745; pins 1 to 12, 16 and 19 to 24 -- 10 ma t sc(max) maximum short-circuit time (all pins to v cc and all pins to gnd and rfgnd) - 10 s t stg ic storage temperature - 40 +150 c t amb operating ambient temperature - 20 +85 c t j junction temperature - 150 c symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 119 k/w symbol parameter conditions min. typ. max. unit supplies v cc supply voltage 4.5 5 5.5 v i cc supply current - 58 65 ma v sw(vhf) vhf band switching voltage 0 - 2v v sw(uhf) uhf band switching voltage 3 - v cc v i sw(vhf) vhf band switching current -- 2 m a i sw(uhf) uhf band switching current v sw(uhf) =5v - 4.5 10 m a if ampli?er s 22 output re?ection coef?cient magnitude -- 12.5 - db phase - 1.4 - deg r s real part of z o =r s +j w l s - 81 -w l s imaginary part of z o =r s +j w l s - 9.5 - nh vhf mixer (including if ampli?er) f i(rf) rf input frequency picture carrier frequency 45.25 - 399.25 mhz f noise ?gure f rf = 50 mhz; see figs 8 and 9 - 79 db f rf = 150 mhz; see figs 8 and 9 - 810db f rf = 300 mhz - 911db g os optimum source conductance for noise ?gure f rf =50mhz - 0.7 - ms f rf = 150 mhz - 0.9 - ms f rf = 300 mhz - 1.5 - ms
1998 mar 09 7 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 g i input conductance f rf = 45.25 mhz - 0.25 - ms f rf = 399.25 mhz - 0.5 - ms c i input capacitance f rf = 45.25 to 399.25 mhz - 2 - pf v o output voltage causing 1% cross modulation in channel f rf = 45.25 mhz; see fig.6 116 119 - db m v f rf = 399.25 mhz; see fig.6 116 119 - db m v v i input voltage causing pulling in channel (750 hz) f rf = 399.25 mhz; note 1 - 88 - db m v g v voltage gain f rf = 45.25 mhz; see fig.4 24.5 27 29.5 db f rf = 399.25 mhz; see fig.4 24.5 27 29.5 db vhf oscillator f osc oscillator frequency 84.15 - 438.15 mhz d f osc(v) oscillator frequency shift with supply voltage d v cc = 5%; note 2 - 100 200 khz d v cc = 10%; worst case in the frequency range; note 2 - 200 - khz d f osc(t) oscillator frequency drift with temperature d t=25 c without compensation: np0 capacitors; worst case in the frequency range; note 3 - 1300 tbf khz d f osc(t) oscillator frequency drift with time worst case in the frequency range; note 4 - 600 tbf khz f osc phase noise, carrier-to-noise sideband 100 khz frequency offset; worst case in the frequency range - 106 - dbc/hz rsc (p-p) ripple susceptibility of v cc (peak-to-peak value) v cc = 5 v; worst case in the frequency range; ripple frequency 500 khz; note 5 15 40 - mv uhf mixer (including if ampli?er) f i(rf) rf input frequency picture carrier frequency 407.25 - 855.25 mhz f noise ?gure f rf = 407.25 mhz; see fig.10 - 810db f rf = 855.25 mhz; not corrected for image; see fig.10 - 911db r s real part of z i =r s +j w l s f rf = 407.25 mhz - 30 -w f rf = 855.25 mhz - 38 -w l s imaginary part of z i =r s +j w l s f rf = 407.25 mhz - 9 - nh f rf = 855.25 mhz - 6 - nh v o output voltage causing 1% cross modulation in channel f rf = 407.25 mhz; see fig.7 116 119 - db m v f rf = 855.25 mhz; see fig.7 114 117 - db m v v i input voltage causing pulling in channel (750 hz) f rf = 855.25 mhz; note 1 - 78 - db m v g v voltage gain f rf = 407.25 mhz; see fig.4 35 38 41 db f rf = 855.25 mhz; see fig.4 35 38 41 db symbol parameter conditions min. typ. max. unit
1998 mar 09 8 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 notes 1. this is the level of the rf signal (100% amplitude modulated with 11.89 khz) that causes a 750 hz frequency deviation on the oscillator signal; it produces sidebands 30 db below the level of the oscillator signal. 2. the frequency shift is defined as the change of the oscillator frequency when the supply voltage varies from v cc = 5 to 4.5 v or from v cc = 5 to 5.25 v. the oscillator is free-running during this measurement. 3. the frequency drift is defined as the change of the oscillator frequency when the ambient temperature varies from t amb =25to0 c or from t amb =25to50 c. the oscillator is free-running during this measurement. 4. the switching on drift is defined as the change of the oscillator frequency between 5 seconds and 15 minutes after switching on. the oscillator is free-running during this measurement. 5. the ripple susceptibility is measured for a 500 khz ripple at the if amplifier output using the measurement circuit; the level of the ripple signal is increased until a difference of 53.5 db between the if carrier set at 100 db m v and the sideband components is reached. 6. channel x beat: picture carrier frequency (f pc ) and sound carrier frequency (f sc ) both at 80 db m v. the rejection of the interfering product f pc(rf) +f sc(rf) - f osc at 35.35 mhz should be >60 db. 7. channel s02: f pc is 76.25 mhz at 70 db m v; f osc = 115.15 mhz. the rejection of f osc - 2 f if = 37.35 mhz should be >66 db. uhf oscillator f osc oscillator frequency 446.15 - 894.15 mhz d f osc(v) oscillator frequency shift with supply voltage d v cc = 5%; note 2 - 30 80 khz d v cc = 10%; worst case in the frequency range; note 2 - 80 tbf khz d f osc(t) oscillator frequency drift with temperature d t=25 c; with compensation; worst case in the frequency range; note 3 - 600 tbf khz d f osc(t) oscillator frequency drift with time worst case in the frequency range; note 4 - 200 tbf khz f osc phase noise, carrier-to-noise sideband 100 khz frequency offset; worst case in the frequency range - 106 - dbc/hz rsc (p-p) ripple susceptibility of v cc (peak-to-peak value) v cc = 5 v; worst case in the frequency range; ripple frequency 500 khz; note 5 15 20 - mv rejection at the if ampli?er output int chx channel x beat note 6 60 -- dbc int s02 s02 beat note 7 66 -- dbc symbol parameter conditions min. typ. max. unit
1998 mar 09 9 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 test and application information fig.4 voltage gain (g v ) measurement in the vhf band. (1) n1 is 2 5 turns. (2) n2 is 2 turns. the gain is defined as the transducer gain plus the voltage transformation ratio (t loss ) of the transformer. z i >> 50 wt v i =2 v meas ; v i =80db m v. v o =v meas + 16 db (transformer ratio and transformer loss); g v =20log n1 n2 ------- - 5 = v o v i ------ handbook, full pagewidth 50 w 50 w v e v meas rms voltmeter spectrum analyzer v i signal source mgk828 d.u.t. vhfin ifout1 ifout2 50 w v o v' meas c t (1) n1 (2) n2 fig.5 voltage gain (g v ) measurement in the uhf band. (1) n1 is 2 5 turns. (2) n2 is 2 turns. the gain is defined as the transducer gain plus the voltage transformation ratio (t loss ) of the transformer. v i =v meas ; v i =70db m v. v o =v meas + 16 db (transformer ratio and transformer loss); g v = 20 log + 1 db (1 db = correction for hybrid loss). n1 n2 ------- - 5 = v o v i ------ handbook, full pagewidth v i 50 w 50 w v e v meas rms voltmeter signal source 50 w a b c d hybrid d.u.t. uhfin1 ifout1 ifout2 uhfin2 spectrum analyzer mgk829 50 w v o v' meas c t (1) n1 (2) n2
1998 mar 09 10 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 fig.6 cross modulation measurement in the vhf band. (1) n1 is 2 5 turns. (2) n2 is 2 turns. z i >> 50 wt v i =2 v meas ; v meas =v o - 16 db (transformer ratio and transformer loss). wanted input signal v i =80db m v at wanted f rf = 45.25 mhz (399.25 mhz). measured level of the unwanted output signal v ou causing 1% am modulation in the wanted output signal; unwanted f rf = 50.75 mhz (404.75 mhz); v ou =v meas +16db. n1 n2 ------- - 5 = handbook, full pagewidth unwanted signal source e u e w 50 w 50 w wanted signal source 50 w mgl275 d.u.t. 18 db attenuator 50 w o v filter 38.9 mhz modulation analyzer hybrid ac bd v rms voltmeter v i am = 30% meas v' vhfin ifout1 ifout2 c t 50 w v v meas rms voltmeter (1) n1 (2) n2 fig.7 cross modulation measurement in the uhf band. handbook, full pagewidth unwanted signal source 50 w 50 w wanted signal source 50 w 50 w mgl276 d.u.t. 18 db attenuator 50 w o v filter 38.9 mhz modulation analyzer hybrid ac bd hybrid ac bd v rms voltmeter v i am = 30% e u e w (1) n1 (2) n2 uhfin1 ifout1 ifout2 uhfin2 c t 50 w v v meas rms voltmeter (1) n1 is 2 5 turns. (2) n2 is 2 turns. v i =v meas ; v meas =v o - 16 db (transformer ratio and transformer loss). wanted input signal v i =70db m v at f rf = 407.25 mhz (855.25 mhz). measured level of the unwanted output signal v ou causing 1% am modulation in the wanted output signal; unwanted f rf = 412.75 mhz (860.75 mhz); v ou =v meas +16db. n1 n2 ------- - 5 =
1998 mar 09 11 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 fig.8 input circuit for optimum noise figure in the vhf band. (a) for f rf = 50 mhz: vhf mixer frequency response measured = 57 mhz; loss = 0 db. image suppression = 16 db. c1 = 1 nf; c2 = 2.2 pf. l1 = 7 turns ( ? 5.5 mm; wire ? = 0.5 mm). i1 = semi rigid cable (rim): 5 cm long. (semi rigid cable (rim); 33 db/100 m; 50 w ; 96 pf/m) . (b) for f rf = 150 mhz: vhf mixer frequency response measured = 150.3 mhz; loss = 1.3 db. image suppression = 13 db. c3 = 1 nf; c4 = 2.2 pf. i2 = semi rigid cable (rim): 30 cm long. i3 = semi rigid cable (rim): 5 cm long. (semi rigid cable (rim); 33 db/100 m; 50 w ; 96 pf/m). handbook, full pagewidth mbe286 - 1 l1 c2 c1 pcb plug plug bnc bnc rim-rim i1 c4 c3 pcb rim-rim i3 i2 (a) (b) f=f meas - loss (of input circuit) (db). fig.9 noise figure (f) measurement in the vhf band. handbook, full pagewidth mgl277 vhfin ifout1 ifout2 d.u.t. noise source noise figure meter bnc rim input circuit c t
1998 mar 09 12 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 loss (in hybrid) = 1 db; f = f meas - loss (in hybrid). fig.10 noise figure (f) measurement in the uhf band. handbook, full pagewidth mgl278 uhfin1 uhfin2 ifout1 d.u.t. noise source noise figure meter 50 w a b c d hybrid ifout2 c t
1998 mar 09 13 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 fig.11 measurement circuit. the pin numbers in parenthesis represent the tda5745. handbook, full pagewidth mgm467 1 (24) 2 (23) 3 (22) 4 (21) uhfin1 uhfin2 vhfin rfgnd 5 (20) 15 pf 15 pf 1 2 3 6 4 7 8 6 (19) 7 (18) 8 (17) iffil1 iffil2 n.c. n.c. 9 (16) 10 (15) 11 (14) 12 (13) bs n.c. n.c. n.c. p9 (12) 13 (11) 14 ifout1 (10) 15 (9) 16 (8) 17 (7) 18 (6) 19 v cc gnd ifout2 uhfoscib1 uhfoscoc1 uhfoscoc2 (5) 20 (4) 21 (3) 22 (2) 23 (1) 24 uhfoscib2 vhfoscib1 vhfoscoc2 vhfoscoc1 tda5744 (tda5745) c1 p1 p2 p3 1 nf c3 1 nf c6 1 nf uhf1 uhf2 vhf uhf c13 c11 1.2 k w 330 w 10 m f (16 v) 10 m f (16 v) vhfh led-3y 330 w vhfl led-3r 330 w uhf r10 r8 r11 led-3g d6 d5 d7 r18 50 w r22 c27 c28 for test purpose only v cc + v cc v cc tr1 bc847b v ripple j5 j1 vhfh j2 vhfl j3 pll j4 vhfoscib2 c17 1 pf 1 pf 1 pf 1 pf c8 2.2 pf c16 c7 2.2 pf c14 c4 r21 2.2 pf c12 c2 d1 bb149 150 pf c9 100 pf d3 ba792 d2 bb152 r9 4.7 k w l2 30 nh l4 80 nh l5 16 nh c18 10 pf 4.7 nf c5 4.7 nf c10 47 pf c15 r6 22 k w r2 22 k w l6 30 nh 1 m h l1 r4 1.5 k w r5 2.7 k w r3 22 k w 22 k w r1 1.5 k w 22 k w r7 d4 bb149 vhfh vhfl + 33 v agnd tuning voltage p6 + 5 v 1234 c22 10 nf c24 10 nf l8 80 nh l9 80 nh c20 1 nf c19 1 nf c21 18 pf 1 2 3 6 l7 4 7 8 if out p4 for test purpose only l3 toko 7 km l value/c value r16 22 k w r14 22 k w + v cc + v cc p8
1998 mar 09 14 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 component values for measurement circuit table 1 capacitors (all smd and np0 unless otherwise speci?ed) table 2 resistors (all smd) component value c1 1 nf c2 150 pf c3 1 nf c4 2.2 pf (n750) c5 4.7 nf c6 1 nf c7 2.2 pf (n750) c8 2.2 pf (n750) c9 100 pf (n750) c10 4.7 nf c11 15 pf c12 1 pf (n750) c13 15 pf c14 1 pf (n750) c15 47 pf c16 1 pf (n750) c17 1 pf (n750) c18 10 pf (n750) c19 1 nf c20 1 nf c21 18 pf c22 10 nf c24 10 nf c27 10 m f (16 v; electrolytic) c28 10 m f (16 v; electrolytic) component value r1 1.5 k w r2 22 k w r3 22 k w r4 1.5 k w r5 2.7 k w r6 22 k w r7 22 k w r8 330 w r9 4.7 k w table 3 diodes and ics table 4 coils table 5 transformer table 6 transistors r10 330 w r11 330 w r14 22 k w r16 22 k w r18 1.2 k w r21 22 k w r22 50 w component value d1 bb149 d2 bb152 d3 ba792 d4 bb149 d5 led-3r d6 led-3y d7 led-3g ic tda5744; tda5745 component value l1 1 m h (inductor) l2 30 nh l4 80 nh l5 16 nh l6 30 nh l8 80 nh l9 80 nh component value l3 23 turns (toko, wire 0.07 mm) l7 n1 = 2 5 turns; n2 = 2 turns (toko, wire 0.09 mm) component value tr1 bc847b component value
1998 mar 09 15 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 internal pin configuration symbol pin configuration (1) average dc voltage (v) tda5744 tda5745 vhf uhf uhfin1 1 24 note 2 1.0 uhfin2 2 23 vhfin 3 22 1.9 note 2 rfgnd 4 21 0.0 0.0 iffil1 5 20 3.4 3.4 iffil2 6 19 n.c. 7 18 not connected note 2 note 2 817 10 15 11 14 12 13 bs 9 16 electronic band switch 0.0 5.0 v cc 13 12 supply voltage 5.0 5.0 mgm468 1 2 (23) (24) mgm469 3 (22) mgm470 4 (21) mgm471 6 5 (19) (20)
1998 mar 09 16 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 notes 1. the pin numbers in parenthesis represent the tda5745. 2. not applicable. ifout1 14 11 2.2 2.2 ifout2 15 10 gnd 16 9 0.0 0.0 uhfoscib1 17 8 note 2 1.9 uhfoscoc1 18 7 2.5 uhfoscoc2 19 6 2.5 uhfoscib2 20 5 1.9 vhfoscib1 21 4 2.0 note 2 vhfoscoc1 22 3 2.7 vhfoscoc2 23 2 2.7 vhfoscib2 24 1 2.0 symbol pin configuration (1) average dc voltage (v) tda5744 tda5745 vhf uhf mgm472 14 (11) 15 (10) mgm473 16 (9) mgm474 17 19 20 18 (5) (7) (6) (8) mgm475 21 23 24 22 (1) (3) (2) (4)
1998 mar 09 17 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 package outline unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.21 0.05 1.80 1.65 0.38 0.25 0.20 0.09 8.4 8.0 5.4 5.2 0.65 1.25 7.9 7.6 0.9 0.7 0.8 0.4 8 0 o o 0.13 0.1 0.2 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 1.03 0.63 sot340-1 mo-150ag 93-09-08 95-02-04 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 112 24 13 0.25 y pin 1 index 0 2.5 5 mm scale ssop24: plastic shrink small outline package; 24 leads; body width 5.3 mm sot340-1 a max. 2.0
1998 mar 09 18 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all ssop packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering is not recommended for ssop packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. even with these conditions, only consider wave soldering ssop packages that have a body width of 4.4 mm, that is ssop16 (sot369-1) or ssop20 (sot266-1) . during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1998 mar 09 19 philips semiconductors preliminary speci?cation low power mixers/oscillators for hyperband tuners tda5744; tda5745 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1998 sca57 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 545104/1200/01/pp20 date of release: 1998 mar 09 document order number: 9397 750 02946

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